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In-situ OMVPE process sensing of GaAs and AlGaAs by photoreflectance

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Abstract

The contactless electromodulation method of photoreflectance has been successfully applied as an in-situ sensor of the OMVPE process. The direct band gap,E 0, of GaAs and AIGaAs has been measured, in-situ, under OMVPE growth conditions. To the best of our knowledge, this is the first report of an in-situ photoreflectance measurement of III-V materials properties in an OMVPE system. This is significant in that it illustrates the potential for the application of photoreflectance as an in-situ process monitor, analogous to the use of RHEED measurements in MBE. The GaAs substrate temperature of 650°, as measured by an optical pyrometer, corresponds to the temperature derived using the Varshni equation and published Varshni coefficients to within the error of the published data.

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Capuder, K., Norris, P.E., Shen, H. et al. In-situ OMVPE process sensing of GaAs and AlGaAs by photoreflectance. J. Electron. Mater. 19, 295–298 (1990). https://doi.org/10.1007/BF02651287

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  • DOI: https://doi.org/10.1007/BF02651287

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