Abstract
In this article, we present results of systematic studies of the effects of grain boundary parameters upon diffusion-induced grain boundary migration (DIGM). It is shown that grain boundary velocity, solute penetration depth, concentration of deposited solute, and activation energy are all strongly and reproducibly dependent upon the grain boundary parameters. The effects are also somewhat different in the cases of symmetrical and asymmetrical boundaries, indicating the importance of the boundary inclination. It is shown that the observed differences can be rationalized in terms of the variations of the driving force for DIGM and the grain boundary mobility.
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Fu-Sen Chen and Girish Dixit, formerly Graduate Students, Department of Materials Science and Engineering, State University of New York at Stony Brook
This paper is based on a presentation made in the symposium “Interface Science and Engineering” presented during the 1988 World Materials Congress and the TMS Fall Meeting, Chicago, IL, September 26–29, 1988, under the auspices of the ASM-MSD Surfaces and Interfaces Committee and the TMS Electronic Device Materials Committee.
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Chen, FS., Dixit, G., Aldykiewicz, A.J. et al. Bicrystal studies of diffusion-induced grain boundary migration in Cu/Zn. Metall Trans A 21, 2363–2367 (1990). https://doi.org/10.1007/BF02646983
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DOI: https://doi.org/10.1007/BF02646983