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Kinetics and mechanism of oxide formation and desorption for high temperature tantalum in dissociated oxygen

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Abstract

Exposure of tantalum filaments between 2400 and 2800 K to non-equilibrium partiallydissociated oxygen (1.6 x 10-2 ≦ Po ≦ 2.7 x 10-1 Pa) is shown to increase both the steady-state dissolved oxygen concentrationand the rate of tantalum oxide desorption. Yet thesame quadratic correlation between tantalum oxide loss and dissolved oxygen concentration as observed for diatomic oxygen exposure is found to be preserved under conditions of oxygen atom impingement. This experimental observation is used to demonstrate that Rideal-type (direct atom impact) reaction steps are not responsible for metal oxide formation and desorption in the O(g)/Ta(s) system. Rather, a Langmuir-Hinshelwood (adatom interaction) reaction mechanism, combined with atomic oxygen chemisorption probabilities approximately twice those of incident molecular oxygen, suffice to explain the Ta-oxidation kinetic data reported herein.

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Authors and Affiliations

  1. Department of Engineering and Applied Science, Chemical Engineering Section, Yale University, 06520, New Haven, Conn.

    Daniel E. Rosner (Professor)

  2. Materials Science Division, Argonne National Laboratory, 111, Argonne

    Hee Chung

  3. Department of Engineering and Applied Science, Yale University, New Haven, Conn.

    Heng Feng (Graduate Student)

Authors
  1. Daniel E. Rosner
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  2. Hee Chung
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  3. Heng Feng
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Additional information

HEE CHUNG, formerly Post-Doctoral Research Associate, Department of Engineering and Applied Science, Yale University, New Haven, Conn.

This work was supported by the United States Air Force Office of Scientific Research, Energetics Division under Grant 73-2487.

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Rosner, D.E., Chung, H. & Feng, H. Kinetics and mechanism of oxide formation and desorption for high temperature tantalum in dissociated oxygen. Metall Trans 5, 2305–2308 (1974). https://doi.org/10.1007/BF02644010

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  • DOI: https://doi.org/10.1007/BF02644010

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