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Dose effects in ion implanted compound semiconductors

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Abstract

In this work a Monte-Carlo method of dynamical type is used to simulate the alteration of compound semiconductor targets of the III–V group, that is GaAs in InP, bombarded with Bi+and Si+. In the model account is taken of the presence of strains in the lattice and the results describe their effects on the behaviour of the ions and on the formation of point defects and of concentration imbalances.

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  1. C.N.R.-Istituto LAMEL, Via dé Castagnoli 1, 1-40126, Bologna, Italy

    A. M. Mazzone

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  1. A. M. Mazzone
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Mazzone, A.M. Dose effects in ion implanted compound semiconductors. Appl. Phys. A 45, 113–118 (1988). https://doi.org/10.1007/BF02565197

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  • DOI: https://doi.org/10.1007/BF02565197

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