Abstract
The electrical resistivity, π, and Seebeck coefficient,S, of the system Sb2Se3 were measured in the ambient temperature range 323≤T≤573 K. Both parameters were found to be affected considerably by the temperature of annealing,T a, in the range 493≤T a≤653 K and by the time of annealing,t a, for periods extending to 16h. Additionally, both depended strongly on the ambient temperature.
The activation energy of ordering of the present system could be calculated by using the effects of isothermal annealing on the considered physical parameters.
Zusammenfassung
In einem Umgebungstemperaturbereich von 323 bis 573 K wurden der elektrische Widerstand π und der Seebock'sche KoeffizientS des Systemes Sb2Se3 untersucht. Für beide Größen wurde eine starke Abhängigkeitvon der TempertemperaturT a im Bereich 493≤T a≤653°C und von der Temperdauert a bis zu 16 Stunden beobachtet. Zusätzlich sind beide auch stark abhängig von der Umgebungstemperatur.
Unter Ausnutzung der Auswirkung des isothermen Temperns auf die fraglichen physikalischen Größen konnte die Aktivierungsenergie der Konditionierung berechnet werden.
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References
S. Luby, J. Cervenak, J. Kubek, M. Marcin and J. Schilder, Czech. J. Phys., B 21 (1971) 878.
C. Wood, R. Mueller and L. R. Gilbert, J. Non-Cryst. Solids, 12 (1973) 295.
Z. Hurych, R. Mueller, C. C. Wang and C. Wood, J. Non-Cryst. Solids, 11 (1972) 153.
L. G. Gibnyak, Soviet Physics-Semiconductors, 6 (1972) 478.
N. M. Bondar, Neorg. Mater., 2 (1966) 1144, (In Russian).
L. G. Bignyak and N. M. Bondar, Ukr. Fiz. Zh., 4 (1969) 1223 (in Russian).
L. I. Tatarinova, Kristallografiya, 4 (1959) 678.
M. M. Ibrahim, N. Afifi, M. M. Hafiz and M. A. Mahmoud, Powder Metallurgy International, 20 (1988) 21.
M. M. Ibrahim, E. Kh. Shokr, M. M. Wakkad and N. M. Megahid, Bulletin of Faculty of Science, Assiut University, Assiut, Egypt 17 (1988) 123
Y. R. Shen, W. F. Leonard and H. Y. Yu, Rev. Sci. Instrum., 48 (1977) 688.
Natl. Bur. Stds. U.S. Mono., 25 (1964) Sec. 37.
H. K. Rockstad, R. Flasck and S. Iwasa, J. Non-Cryst. Solids, 8–10 (1972) 326.
R. Kassing and W. Bax, Jpn. J. Appl Phys. 13 (1974) 801.
N. Tohge, T. Minami and M. Tanaka, Jpn. J. Appl. Phys., 16 (1977) 977.
N. F. Mott and E. A. Davis: Electronic Processes in Non-Crystalline Materials, Clarendon Press, Oxford 1977, p. 217.
A. F. Ioffe, Physics of Semiconductors, Infosearch, London 1960, p. 288; R. R. Heikes and R. W. Ure, Jr., Thermoelectricity: Science and Engineering, Intersicence, New York 1961; J. Tauck, Photo and Thermoelectric Effects in Semiconductors, Pergamon, New York 1962.
N. Tohge, T. Minami and M. Tanaka, J. Non-Cryst. Solids 37 (1980) 23.
N. F. Mott, E. A. Davis and R. A. Street Phil. Mag., 32 (1975) 961.
P. Nagels, R. Callerts and M. Denayer, Amorphous and Liquid Semiconductors, Edited by J. Stuke and W. Brenig, Taylor and Francis Ltd. London 1974, p. 867.
J. Wolny, R. Kokozka, J. Soltys and P. Barta, J. Non-Cryst. Solids, 113 (1989) 161.
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Ibrahim, M.M., Wakkad, M.M. & Shokr, E.K. Conduction mechanisms of antimony selenide. Journal of Thermal Analysis 42, 1193–1205 (1994). https://doi.org/10.1007/BF02546929
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DOI: https://doi.org/10.1007/BF02546929