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Materials engineering for optoelectronic crystals related to III–V compounds

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Abstract

An introductory glimpse of modern approaches to the application of productive and reasonable techniques for the defined electronic materials will be presented. The paper is divided into four parts. Each is supplemented with illustrations. The first part explains the meaning of materials engineering for electronics (MEE) and for optoelectronic crystals in particular. Its interdisciplinarity is shown and also the range of problems it can solve. Graduate courses of someMEE disciplines are also given.

The second part of the paper related to the feasible solution withMEE as to the optimal realization of the application requirements. The physical modelling, databases and characterization techniques are given. The third part deals with particular materials: III–V semiconductors. A brief survey of the best methods of crystal growth is given, stressing those which imply a possibility of creating crystals defined up to the atomic range.

The last part is devoted to our team's orginal crystal growth methods:CAM-S (A Crystallization Method Providing Composition Autocontrol in Situ) andCOM-S (Calculation Method of Optimal Molten-Solution Composition). The combination of these methods, further modified with vibrational and magneto-hydrodinamical stirring (VS, MHD-S), allows us to grow crystalline ingots of ternary solid solutions (TSS) possessing extreme homogeneity. Illustrations on In−Ga−Sb system are supplied. We conclude with a discussion of the impact of such methods and approaches on a device quality and to other fields.

Zusammenfassung

Es wird ein kurzer Einblick in moderne Methoden zur Anwendung produktiver und akzeptabler Techniken für bestimmte elektronische Materialien gegeben. Der Artikel gliedert sich in vier Teile, wovon jeder mit Illustrationen ausgestattet ist. Der erste Teil erklärt die Bedeutung von Materialtechnik für Elektronik (MEE) und im speziellen für optoelektronische Kristalle. Es wird deren Interdisziplinarität gezeigt und auch der Fragenbereich, in dem sie angewendet werden kann. Es werden auch Hochschulkurse einigerMEE Disziplinen angeführt.

Der zweite Teil bezieht sich auf eine mögliche Lösung mittelsMEE bezüglich der optimalen Realisierung der Anwendungsanforderungen. Physikalische Modellier-, Datenbanken- und Charakterisierungstechniken werden gegeben. Der dritte Teil beschäftigt sich mit speziellen Materialien: III–V Halbleiter. Es wird ein kurzer Überblick der besten Methoden für das Züchten von Kristallen gegeben, wobei jene besonders betont werden, die die Möglichkeit zur Schaffung von Kristallen bis zum atomaren Bereich beinhalten.

Der letzte Teil widmet sich den ursprünglichen Kristalzüchtungsmethoden unseres Forschung-steams:CAM-S undCOM-S. Unter weiterer Modifizierung mittelsVS undMHD-S erlaubt uns die Kombination dieser Methoden die Züchtung von Kristallrohblöcken von ternären festen Lösungen (TSS) mit einer extrem hohen Homogenität. Dafür werden Beispiele am System In−Ga−Sb gezeigt. Zum Schluß erfolgt eine Diskussion der Auswirkung solcher Methoden auf die Gerätegüte und andere Bereiche.

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  1. Faculty of Electrical Engineering, Department of Mechanics and Materials Science, CTU-Prague, Technická 2, 16627, Praha 6, Czech Republic

    J. J. Venkrbec & J. Kousal

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Venkrbec, J.J., Kousal, J. Materials engineering for optoelectronic crystals related to III–V compounds. Journal of Thermal Analysis 43, 377–388 (1995). https://doi.org/10.1007/BF02546825

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