Skip to main content
SpringerLink
Log in

Magnetothermal factor of intersubband relaxation of 2D electrons from a highly doped heterotransition in AlGaAs (Si)/GaAs

  • Physics of Semiconductors and Dielectrics
  • Published:
Russian Physics Journal Aims and scope

Abstract

Characteristics of the Shubnikov-de Haas transverse magnetoresistance oscillations of 2D electrons in highly dopedAlGaAs(Si)/GaAs heterostructures are investigated in the present paper. Anomalies caused by the occupation of two quantization subbands are revealed for samples with 2D-electron density ns>7·1011 cm−2 at T=1.7–16 K and magnetic field induction B up to 7.4 T. The dependences of the normalized oscillation amplitude on the magnetic field show bends that typically displace toward weaker magnetic fields with decreasing temperature and electron density ns. A nonmonotonic (oscillating) dependence of the Dingle temperature on the experimental temperature is found. These anomalies are interpreted for a model of the occupation of two quantization subbands with electrons. They are caused by the competitive character, of intersubband 2D-electron scattering. Small-angle relaxation times are estimated for 2D electrons of the zero and first quantization subbands.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. V. I. Kadushkin, Fiz. Tekh. Poluprovodn.,25, No. 9, 459 (1991);26, No. 7, 1323 (1992).

    Google Scholar 

  2. D. R. Leadley, R. J. Nicholas, J. J. Hams, and C. T. Foxon, Semicond. Sci. Tech.,4, 885 (1989);5, 1081 (1990).

    Article  ADS  Google Scholar 

  3. R. T. Coleridge, Semicond. Sci. Tech.,5, 961 (1990); Phys. Rev.,B44, 3793 (1991).

    Article  ADS  Google Scholar 

  4. S. Ben Amor, L. Dmowski, J. C. Portal,et al., Appl. Phys. Lett.,57, 2925 (1990).

    Article  ADS  Google Scholar 

  5. V. I. Kadushkin, E. L. Shangina, and F. M. Tsakhaev, Phys. Low-Dim. Struct.,11/12, 43 (1996).

    Google Scholar 

  6. V. Karpus, Fiz. Tekh. Poluprovodn., No. 20, 12 (1986); No. 22, 43 (1988).

    Google Scholar 

  7. V. F. Gantmakher and I. B. Levinson, Scattering of Current Carriers in Metals and Semiconductors [in Russian], Nauka, Moscow (1984).

    Google Scholar 

  8. S. Mori and T. Ando, J. Phys. Soc. Jpn.,48, 865 (1980).

    Article  Google Scholar 

  9. R. Fletcher, E. Zaremba, M. D'Jorio,et al., Phys. Rev.,B38, 7866 (1988).

    Article  ADS  Google Scholar 

  10. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkos, J. Appl. Phys.,54, 6432 (1983).

    Article  ADS  Google Scholar 

Download references

Authors
  1. V. I. Kadushkin
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

S. A. Esenin Ryazan' State Pedagogical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 52–57, January, 2000.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kadushkin, V.I. Magnetothermal factor of intersubband relaxation of 2D electrons from a highly doped heterotransition in AlGaAs (Si)/GaAs. Russ Phys J 43, 46–51 (2000). https://doi.org/10.1007/BF02513008

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02513008

Keywords

Search

Navigation