Abstract
Results of a study of the parameters of Hg1−xCdxTe epitaxial structures produced by molecular beam epitaxy are presented. Results are given for measurements of the recombination and spectral properties and the noise properties of photosensitive elements have been studied. A high detectivity was obtained over a broad wavelength range. The parameters of MOS photodetector elements based on isotype n-Hg1−xCdxTe heterostructures with compositions x=0.2 and x=0.3 were estimated and compared with experimental data on the charge carrier accumulation time in MOS structures in the nonequilibrium depletion regine.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Element Base for Optoelectronic Devices [in Russian], V. E. Zuev (ed.), MP “Rasko”, Tomsk (1992).
A. V. Voitsekhovskii, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 6, 125–130 (1978).
A. V. Voitsekhovskii and Yu. V. Lilenko, Pulsed Photometry, No. 6, 200–204 (1979).
A. V. Voitsekhovskii and V. N. Davydov, Photoelectric MOS Structures from Narrow-Band Semiconductors [in Russian], Radio i svyaz', Tomsk (1990).
V. A. Kemarskii, N. A. Kul'chitskii, and L. A. Osadchev, Data Surveys, Survey No. 5207, Vol. 2 (1990), pp. 3–73.
A. V. Voitsekhovskii, I. I. Izhnin, N. A. Kul'chitskii, et al., Zarubezh. Élektromnaya Tekhn., No. 12, 3–44 (1991).
A. V. Voitsekhovskii, Yu. A. Denisov, A. P. Kokhanenko, et al., Abtometriya, No. 4, 51–58 (1996).
A. V. Voitsekhovskii, Yu. A. Denisov, A. P. Kokhanenko, et al., Izv. Vyssh. Uchebn. Zaved., Fiz., No. 9, 96–101 (1997).
A. V. Voitsekhovskii and Yu. V. Lilenko, Phys. Stat. Solidi (a), 67, 381–386 (1981).
A. V. Voitsekhovskii, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 2, 99–105 (1994).
A. V. Voitsekhovskii and Yu. V. Lilenko, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 9, 125–127 (1981).
A. V. Voitsekhovskii, Yu. A. Denisov, A. P. Kokhanenko, et al., Fiz. Tekh. Poluprov., No. 7, 774–776 (1997).
M. E. DeSouza, M. Boukerche, and J. P. Faurie, J. Appl. Phys., No. 10, 5195–5199 (1990).
S. N. Shin, J. M. Arias, M. Zandian, et al., Appl. Phys. Letters, No. 21, 2718–2720 (1991)
M. A. Kinch, S. R. Borrello, and A. Simmons, Infr. Phys., No. 2, 127–135 (1977).
A. V. Voitsekhovskii, A. P. Kokhanenko, and Yu. V. Lilenko, Fizich. Élektronika, No. 26, 52–56 (1983).
M. G. Andrukhiv, V. I. Ivanov-Omskii, and V. C. Ogorodnicov, Infrared Physics,20, 373–377 (1980).
N. P. Aigina, V. V. Antonov, A. V. Voitsekhovskii, et al., Zarubezhnaya Élektronnaya Tekhn., No. 5, 3–72 (1984).
V. V. Antonov, A. V. Voitsekhovskii, E. P. Kazak, et al., Mikroélektronika, No. 3, 274–276 (1980).
V. V. Antonov, A. V. Voitsekhovskii, A. V. Kriulin, et al., Mikroélektronika, No. 5, 407–413 (1987).
V. V. Antonov, A. V. Voitsekhovskii, E. P. Kazak, et al., Mikroélektronika, No. 1, 70–73 (1982).
V. V. Antonov and A. V. Voitsekhovskii, Zh. Teor. Fiz. Pis'ma, No. 12, 742–746 (1984).
M. W. Goodwin, M. A. Kinch, and R. J. Koestner, J. Vac. Sci. Technol.,A8, 1226–1232 (1990).
V. F. Synorov, A. N. Likholet, and B. I. Sysoev, Mikroélektronika, No. 1, 56–63 (1977).
M. W. Goodwin, M. A. Kinch, and R. J. Koestner, J. Vac. Sci. Technol.,A7, 523–527 (1989).
V. C. Lopes, A. J. Syllaios, and M. C. Chen, Semicond. Sci. Technol.,8, 824–841 (1993).
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 44–49, August, 1998.
Rights and permissions
About this article
Cite this article
Voitsekhovskii, A.V., Kokhanenko, A.P. Photosensitive structures using Hg1−xCdxTe solid solutions grown by molecular beam epitaxy. Russ Phys J 41, 773–779 (1998). https://doi.org/10.1007/BF02510642
Issue Date:
DOI: https://doi.org/10.1007/BF02510642