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Microphotoluminscence of C60 fullerenes doped with ions of rare-earth elements

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Journal of Russian Laser Research Aims and scope

Abstract

Optical properties of various fullerene matrices based on C60 were studied by scanning microphotoluminescence in the range of 660–2300 nm. Variations observed in the photoluminescence spectra at room temperature after prolonged exposure to focused He−Ne laser irradiation directly after implantation of ions of rare-earth elements (Yb+ Nd+, or Er+) or after an isochronal thermal annealing of ion-implanted samples in the temperature range of 50–150°C are attributed to changes in the ratio of the generation and recombination rates of native lattice defects. Photoluminescence of fullerene matrices implanted with Yb+ ions has an intracenter origin at liquid-nitrogen temperature. A variation in the photoluminescence of fullerene matrices following dissolution of the samples in toluene and subsequent recrystallization indicates that Yb atoms are involved in the formation of fullerene-based endohedral or more intricate cluster complexes. The results obtained make it possible to identify a number of technological factors that are important for the production of new photoluminescent media, including those for laser operation.

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Authors and Affiliations

  1. P. N. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii Pr. 53, 117924, Moscow, Russia

    S. A. Kazaryan, A. N. Oraevsky & N. F. Starodubtsev

Authors
  1. S. A. Kazaryan
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  2. A. N. Oraevsky
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  3. N. F. Starodubtsev
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Translated from a manuscript submitted January 17, 1999.

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Kazaryan, S.A., Oraevsky, A.N. & Starodubtsev, N.F. Microphotoluminscence of C60 fullerenes doped with ions of rare-earth elements. J Russ Laser Res 20, 271–278 (1999). https://doi.org/10.1007/BF02508544

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  • DOI: https://doi.org/10.1007/BF02508544

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