Abstract
A setup is described for measuring the noise power density spectra of optical radiation detectors at frequencies from 1 to 105 GHz in the detector and background temperature range from 80 to 500 K. Results obtained with lead sulfide photoresistors and silicon and indium antimonide photodiodes are presented.
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References
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Additional information
Translated from Izmertel'naya Tekhnika, No. 1, pp. 57–61, January, 1997.
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Sokolik, S.A., Gulyaev, A.M. & Miroshnikova, I.N. Improved setup for studying the low-frequency noise in semiconductor devices and structures. Meas Tech 40, 85–90 (1997). https://doi.org/10.1007/BF02505172
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DOI: https://doi.org/10.1007/BF02505172