Skip to main content
SpringerLink
Log in

Electrical and optical properties of MOVPE grown GaAs1−x P x

  • Published:
Il Nuovo Cimento D

Summary

A study of the optical and electrical properties of the alloy system GaAs1−x P x , grown by MOVPE, is presented. Investigations of injection luminescence and photoluminescence indicate that the material has optical properties compatible with LED requirements. We also show, for the first time, that the main deep electron trap in GaAs (EL2) can be traced into the GaAs1−x P x system.

Riassunto

Si presenta uno studio delle proprietà ottiche ed elettriche del sistema di leghe GaAs1−x P x , cresciute con MOVPE. Ricerche sulla luminescenza ad iniezione e sulla fotoluminecenza indicano che il materiale ha proprietà ottiche compatibili con le esigenze dei LED. Si mostra anche, per la prima volta, che la principale trappola elettronica profonda in GaAs (EL2) può essere ritrovata nel sistema GaAs1−x P x .

Резюме

Исследуются оптические и электрические свойства системы GaAs1−x P x . Исследования инжекционной и фотолюминесценции указывают, что это соединение имеет оптические свойства, совместимые с требованиями LED. Мы впервые показываем, что главная глубокая электронная ловушка в GaAs(EL2) может быть прослежена в системе GaAs1−x P x .

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Literatur

  1. J. J. Tietjen andJ. A. Amick:J. Electrochem. Soc.,113, 724 (1966).

    Google Scholar 

  2. Proceedings of the International Conference on MOVPE, inJ. Crystal Growth,55, 1 (1981).

  3. M. Inoue andK. Asahi:Jpn. J. Appl. Phys. 11, 919 (1972).

    Article  Google Scholar 

  4. T. Saitoh andS. Minagawa:J. Electrochem. Soc.,120, 656 (1973).

    Google Scholar 

  5. L. Samuelson, P. Omling, H. Titze andH. G. Grimmeiss:J. Phys. C,12, 323 (1982).

    Google Scholar 

  6. L. Samuelson, P. Omling, H. Titze andH. G. Grimmeiss:J. Cryst. Growth,55, 164 (1981).

    Article  Google Scholar 

  7. D. V. Lang:J. Appl. Phys.,45, 3023 (1974).

    Article  ADS  Google Scholar 

  8. H. G. Grimmeiss andC. Ovrén:J. Phys. E,14, 1032 (1981).

    Article  ADS  Google Scholar 

  9. M. H. Pilkuhn:Handbook on Semiconductors, Vol.4 (Amsterdam, 1981), p. 570.

    Google Scholar 

  10. M. G. Craford, R. W. Shaw, A. H. Herzog andW. O. Groves:J. Appl. Phys.,43, 4075 (1972).

    Article  ADS  Google Scholar 

  11. P. J. Dean, G. Kaminsky andR. B. Zetterstrom:Phys. Rev.,18, 1149 (1969).

    Article  ADS  Google Scholar 

  12. A. A. Kopylov andA. N. Pikhtin:Sov. Phys. Semicond.,15, 1257 (1981).

    Google Scholar 

  13. A. Mitonneau, A. Mircea, G. M. Martin andD. Pons:Rev. Phys. Appl.,14, 853 (1979).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Solid State Physics, University of Lund, Box 725, S-220 07, Lund, Sweden

    P. Omling, L. Samuelson, H. Titze & H. G. Grimmeiss

Authors
  1. P. Omling
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. L. Samuelson
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. H. Titze
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. G. Grimmeiss
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Omling, P., Samuelson, L., Titze, H. et al. Electrical and optical properties of MOVPE grown GaAs1−x P x . Il Nuovo Cimento D 2, 1742–1747 (1983). https://doi.org/10.1007/BF02457860

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02457860

PACS. 78.55

Search

Navigation