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Dislocational analog of the nernst-ettinghausen transverse effect in ionic crystals with two types of mobile point defects

  • Physics of Semiconductors and Dielectrics
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Russian Physics Journal Aims and scope

Abstract

The Nernst-Ettinghausen effect in ionic crystals with two types of mobile point defects is investigated. Expressions are obtained for the dipole moment of the crystal and the potential difference between the faces of the crystal.

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Authors
  1. S. G. Gestrin
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  2. A. N. Sal'nikov
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  3. E. V. Struleva
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Additional information

Saratovsk State Technical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 41–45, October, 1996.

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Gestrin, S.G., Sal'nikov, A.N. & Struleva, E.V. Dislocational analog of the nernst-ettinghausen transverse effect in ionic crystals with two types of mobile point defects. Russ Phys J 39, 934–937 (1996). https://doi.org/10.1007/BF02437136

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  • DOI: https://doi.org/10.1007/BF02437136

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