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The SnSe-SnSe2 Eutectic; aP-N multilayer structure

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Abstract

The conditions required to grow a two-phaseP-N heterojunction from a eutectic melt are discussed from general principles. It is shown that the lamellar SnSe-SnSe2 eutectic exhibits 103 to 104 P-N heterojunctions per cm, and the crystallographic relationship between the SnSe- and the SnSe2-lamellae is reported. A simple, chemical vapouretching technique is discussed which enables the components of the eutectic to be identified.

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Authors and Affiliations

  1. Philips Research Laboratories, Eindhoven, Netherlands

    W. Albers & J. Verberkt

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  1. W. Albers
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  2. J. Verberkt
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Albers, W., Verberkt, J. The SnSe-SnSe2 Eutectic; aP-N multilayer structure. J Mater Sci 5, 24–28 (1970). https://doi.org/10.1007/BF02427180

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  • DOI: https://doi.org/10.1007/BF02427180

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