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Cobalt disilicide buffer layer for YBCO film on silicon

  • Materials, Junction Characterization and Modification
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Abstract

The CoSi2 films were used as buffer layers of YBCO/CoSi2/Si(100), YBCO/ZrO2/CoSi2/Si(100) and YBCO/CeO2/YSZ/CoSi2/epi-Si/Al2O3 heterostructures in this work. Transition temperatures of YBCO films were obtained up to 86K for YBCO films deposited by laser ablation on the top of CeO2/YSZ/CoSi2/Si/Al2O3 structure. Local nucleation on the crystal defects of silicon, the phenomenon of lateral directed growth (DLG) and agglomeration of CoSi2 phase are responsible for grain boundaries (GB) position in CoSi2 layer and its roughness. The roughness was decreased using an additional Zr film on the top structure.

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Authors and Affiliations

  1. Institute for Physics Metals, National Academy of Sciences, Kiev, Ukraine

    I. Belousov & E. Rudenko

  2. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Jena, Germany

    S. Linzen & P. Seidel

Authors
  1. I. Belousov
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  2. E. Rudenko
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  3. S. Linzen
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  4. P. Seidel
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Belousov, I., Rudenko, E., Linzen, S. et al. Cobalt disilicide buffer layer for YBCO film on silicon. J Low Temp Phys 106, 433–438 (1997). https://doi.org/10.1007/BF02399649

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  • DOI: https://doi.org/10.1007/BF02399649

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