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Electronic transport in RuO2-based thick film resistors at low temperatures

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Abstract

The electrical conductivity of various RuO2-based thick film paste resistors was investigated in the temperature range between 50 mK and 20K. It is shown that models based on variable range hopping and simple models based on tunnelling of charge carriers between conductive grains do not provide a satisfactory explanation for the temperature dependence of the electrical conductivity in these materials at very low temperatures. We suggest a new mechanism based on tunnelling of electrons through graded barriers between conductive particles.

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References

  1. S. Vasudevan and R. W. Vest,Proc. Int. Symp. Hybrid Microelectr., Baltimore 1989, p. 180; R. W. Vest and S. B. Lee,Proc. 6th Int. Microelectr. Conf., Tokyo (1990), p. 83.

  2. N. Niciloso, A. LeCorre-Frisch, J. Maier, and R. J. Brook,Solid State Ionics 75, 211 (1995).

    Article  Google Scholar 

  3. T. Yamaguchi and Y. Nakamura,J. Am. Ceram. Soc. 78, 1372 (1995).

    Article  ADS  Google Scholar 

  4. K. Bobran, A. Kusy, A. W. Stadler, and G. Wilezynski,Int. J. Electronics 78, 113 (1995).

    Google Scholar 

  5. J. Soundée, G. Chardin, Y. Girauld-Héraud, P Pari, and M. Chapellier,J. Low Temp. Phys. 93, 319 (1993).

    Article  Google Scholar 

  6. R. W. Willekers, F. Mathu, H. C. Meijer, and H. Postma,Cryogenics 30, 351 (1990).

    Article  Google Scholar 

  7. Ya. E. Volokitin, R. C. Thiel, and L. J. de Jongh,Cryogenics 34, 771 (1994).

    Article  Google Scholar 

  8. I. Baťko, K. Flachbart, M. Somora, and D. Vanický,Cryogenics 35, 105 (1995).

    Article  Google Scholar 

  9. F. Forlani and M. Prudenziati,Electrocomp. Sci. Technol. 3 77 (1976).

    Google Scholar 

  10. G. E. Pike and C. H. Seager,J. Appl. Phys. 48, 5152 (1977).

    Article  ADS  Google Scholar 

  11. W. Schoepe,Physica B 165–166, 299 (1990).

    Google Scholar 

  12. B. I. Shklovskii and A. L. Efros,Electronic Properties of Doped Semiconductors, Springer-Verlag, Berlin (1984); A. W. Ionov and I. S. Shlimak, inHopping Transport in Solids, M. Pollak and B. Shklovskii (eds.), Elsevier Sci. Publ. B.V., Amsterdam (1991), p. 397.

    Google Scholar 

  13. O. Entin-Wohlman, Y. Gefen, and Y. Shapira,J. Phys. C: Solid State Phys. 16, 1161 (1983).

    Article  ADS  Google Scholar 

  14. C. J. Adkins, inThe Metal—Nonmetal Transition Revisited, P. P. Edwards and C. N. Rao (eds.), Taylor and Francis, London (1995) p. 121.

    Google Scholar 

  15. C. J. Adkins,J. Phys.: Condens. Matter. 1, 1253 (1989).

    Article  ADS  Google Scholar 

  16. P. Sheng, E. K. Sichel, and J. I. Gittleman,Phys. Rev. Lett. 40, 1197 (1978).

    Article  ADS  Google Scholar 

  17. M. W. Meisel, G. R. Stewart, and E. D. Adams,Cryogenics 29, 1169 (1989).

    Article  Google Scholar 

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Roman, J., Pavlík, V., Flachbart, K. et al. Electronic transport in RuO2-based thick film resistors at low temperatures. J Low Temp Phys 108, 373–382 (1997). https://doi.org/10.1007/BF02397680

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  • DOI: https://doi.org/10.1007/BF02397680

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