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Properties of NTD #23 Ge sensors and RuO2 films as thermal sensors for bolometers

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Abstract

We have studied the thermal behavior of NTD #23 Ge samples and RuO2 films at temperatures from 20 to 100 mK. The electrical and thermal properties have been compared for both sensors. An original method to determine whether the electrical field or the hot electrons are responsible for the electrical response is described. In addition, this method measures the heat capacity of the electrons. Studying bolometers, a significant difference is observed between electrically and particle induced heat pulses.

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Authors and Affiliations

  1. DRECAM/SPEC, CEA Saclay, 91191, Gif/Yvette, France

    J. Soudée, P. Pari & M. Chapellier

  2. Laboratoire de Physique des Solides, Université Paris-Sud, 91405, Orsay, France

    J. Soudée & M. Chapellier

  3. Laboratoire de Physique Corpusculaire, Collège de France, 75005, Paris, France

    Y. Giraud-Héraud

  4. DAPNIA/SPP, CEA Saclay, 91191, Gif/Yvette, France

    G. Chardin

Authors
  1. J. Soudée
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  2. G. Chardin
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  3. Y. Giraud-Héraud
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  4. P. Pari
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  5. M. Chapellier
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Soudée, J., Chardin, G., Giraud-Héraud, Y. et al. Properties of NTD #23 Ge sensors and RuO2 films as thermal sensors for bolometers. J Low Temp Phys 93, 319–324 (1993). https://doi.org/10.1007/BF00693440

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  • DOI: https://doi.org/10.1007/BF00693440

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