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Mössbauer investigations of151Eu implanted in Si

  • Implantation Radiation Damage after Effects
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Abstract

The CEM spectra of151EuSi sample (dose 1016ions/cm2) implanted at 293K showed complete amorphisation of the implanted region. Annealing this sample at 873K indicated partial recovery of the damaged layer. The implantation at an elevated temperature produced randomly distributed microcrystals giving a polycrystalline like structure. These results are discussed in combination with channeling and RBS findings.

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Authors and Affiliations

  1. Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, 400005, Bombay, India

    A. Bhagawat, K. G. Prasad & R. P. Sharma

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  1. A. Bhagawat
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  2. K. G. Prasad
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  3. R. P. Sharma
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Bhagawat, A., Prasad, K.G. & Sharma, R.P. Mössbauer investigations of151Eu implanted in Si. Hyperfine Interact 42, 975–980 (1988). https://doi.org/10.1007/BF02395553

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