Abstract
The formation of SiC hollow particles by gas-phase reaction in the silane-methane-hydrogen system was studied at temperatures from 1200 to 1400° C. Synthesized powders were analysed by means of the thermogravimetry, X-ray diffraction, transmission electron microscopy, infrared irradiation, etc. The powders synthesized at 1200 to 1300° C consisted ofβ-SiC and silicon phases, but they became almost hollowβ-SiC particles at 1400° C. The composition, particle size, and shell thickness of the synthesized particles were dependent on the reaction conditions. From lattice parameter measurements, a certain amount of excess silicon was verified to be incorporated into theβ-SiC lattice. On the other hand, excess carbon existed, for the most part, as an amorphous phase not forming solid solutions withβ-SiC. Transmission electron microscopy observations and infrared absorption measurements have shown that excess carbon is contained within the shells of hollow particles, while unreacted excess silicon exists as a crystalline phase mostly in the cores of the particles.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
V. MUNCH, in “Landolt-Bornstein”, Vol. 17(a) (Springer-Verlag, Berlin, Heidelberg, 1982) p. 132.
S. Ogihara, K. Maeda, Y. Takeda and K. Nakamura,J. Amer. Ceram. Soc. 68 (1985) C-16.
K. KOUMOTO, M. SHIMOHIGOSHI, S. TAKEDA and H. YANAGIDA,J. Mater. Sci. Lett. 6 (1987) 1453.
Y. OKABE, J. HOJO and A. KATO,Nippon Kagaku Kaishi 2 (1980) 188.
C. M. HOLLABAUGH, D. E. HULL, L. R. NEWKIRK and J. J. PETROVIC,J. Mater. Sci. 18 (1983) 3190.
A. MITSUI and A. KATO,Yogyo-Kyokai-Shi 94 (1986) 517.
W. R. CANNON, S. C. DANFORTH, J. S. HAGGERTY and R. A. MARRA,J. Amer. Ceram. Soc. 65 (1982) 330.
Y. SUYAMA, R. M. MARRA, J. S. HAGGERTY and H. K. BOWEN,Amer. Ceram. Soc. Bull. 64 (1985) 1356.
Y. Ando and R. Uyeda,J. Amer. Ceram. Soc. 64 (1981) C-12.
Y. ANDO, M. OHKOHCHI and R. UYEDA,Jpn J. Appl. Phys. 19 (1980) L693.
A. TAYLOR and R. M. JONES, in “Silicon Carbide” (Pergamon, New York, 1960) p. 147.
C. E. RYAN, R. C. HARSHALL, J. J. HAULEY, I. BERMAN and D. P. CONSIDINE, AFCRL-67-0436, Physical Science Research Paper, August (1967) no. 336.
P. T. B. SHAFFER,Mater. Res. Bull. 4 (1969) S104.
L. V. AZAROFF, in “Introduction to Solids” (McGraw-Hill, New York, 1960) p. 441.
S. HAYASHI, H. KANAMORI and K. YAMAMOTO,Kotai-Butsuri 17 (1982) 297.
L. CHEN, T. GOTO and T. HIRAI, in “Proceedings of the 26th Symposium on Basic Science of Ceramics”, Nagoya edited by S. Hirano (1988) p. 114.
D. R. STULL and H. PROPHET, in “JANAF Thermochemical Tables” 2nd Edn (US Government Printing Offices, Washington D.C., 1971).
A. KATO and Y. OKABE,J. Amer. Ceram. Soc. 63 (1980) 236.
R. N. GHOSHTAGORE and R. L. COBLE,Phys. Rev. 143 (1966) 623.
M. H. HON and R. F. DAVIS,J. Mater. Sci. 14 (1979) 2411.
—Idem, ibid. 15 (1980) 2073.
J. D. HONG and R. F. DAVIS,J. Amer. Ceram. Soc. 63 (1980) 546.
—Idem,,J. Mater. Sci. 16 (1981) 2485.
D. P. Birnie III,J. Amer. Ceram. Soc. 69 (1986) C-33.
A. KATO, J. HOJO and Y. OKABE, in “Memoirs of the Faculty of Engineering” (Kyushu University, Kyushu, 1981) p. 319.
J. V. SMITH, ASTM 1-1119 (American Society for Testing and Materials, Philadelphia, Pennsylvania, 1916).
R. JENKINS, JCPDS 27–1402 (International Centre for Diffraction Data, Swarthmore, 1986).
“Science Encyclopedia”, edited by the International Science Pro. Foundation (Maruzen, Tokyo, 1985) p. 859.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Pai, C.H., Koumoto, K., Takeda, S. et al. Preparation of SiC hollow particles by gas-phase reaction in the SiH4-CH4-H2 system. J Mater Sci 24, 3679–3685 (1989). https://doi.org/10.1007/BF02385756
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF02385756