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Transport properties of the interface metal chalcogenide/vacuum

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Abstract

The process of spontaneous thermal dissociation of the semiconducting nonstoichiometric compounds Cu2-δX (X=S, Se) in vacuum has been investigated. Thermogravimetric, X-ray and electrochemical techniques reveal that the dissociation rates sharply decrease at δ≤δcr. (δcr.=f(T)) and the chalcogen fluxes from the compounds into the vacuum become immeasurably small. The results of the experiments are discussed in terms of the formation of a phase at the surface with properties of a compound of constant composition. Possible reasons are the excess surface energy together with the high mobility of copper ions which results probably in the reconstruction of the subsurface layers.

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Authors and Affiliations

  1. Department of Physics of Condensed Matter, Ural State University, 620083, Ekaterinburg, Russia

    V. N. Konev & A. L. Nadolsky

  2. Research Institute of Physics and Applied Mathematics, Ural State University, 620083, Ekaterinburg, Russia

    J. E. Krzhivitskaya

Authors
  1. V. N. Konev
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  2. A. L. Nadolsky
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  3. J. E. Krzhivitskaya
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Konev, V.N., Nadolsky, A.L. & Krzhivitskaya, J.E. Transport properties of the interface metal chalcogenide/vacuum. Ionics 7, 138–141 (2001). https://doi.org/10.1007/BF02375481

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  • DOI: https://doi.org/10.1007/BF02375481

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