Abstract
The thermal balance is considered in an intrinsic semiconductor in the presence of a laser beam with a photon energy less than the width of the forbidden band, as a result of which absorption by free carriers plays the principal role. It is shown that a radiation power threshold exists above which the stationary temperature distribution is impossible. For typical values of the parameters the threshold power is ∼1 kW, and the time required for instability to develop is ∼10−3–1 sec.
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Literature cited
W. Frantz, Breakdown of Dielectris [Russian translation], IL, Moscow (1961).
D. A. Frank-Kamenetskii, Diffusion and Heat Transfer in Chemical Kinetics [in Russian], Izd. Nauka, Moscow (1967).
E. Conwell, Kinetic Properties of Semiconductors in Strong Electric Fields [Russian translation], Izd. Mir, Moscow (1970).
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Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 15, No. 1, pp. 33–37, January, 1972.
The author is indebted to V. L. Bonch-Bruevich, Yu. V. Gulyaev, I. P. Zvyagin, P. E. Zil'berman and A. G. Mironov for discussing the work.
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épshtein, é.M. Thermal instability of a semiconductor in a lasing beam. Radiophys Quantum Electron 15, 22–25 (1972). https://doi.org/10.1007/BF02209236
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DOI: https://doi.org/10.1007/BF02209236