Abstract
14 MeV neutron activation analysis technique is used to estimate thickness of silicon films deposited on glass plates. The elemental barium present in the glass plate was used as an internal monitor. Measured values of film thickness are in agreement within ±5% with the results obtained by weight method.
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References
L. I. Maissel, R. Glang, Handbook of Thin Film Technology, McGraw Hill Co., 1970.
A. G. Joglekar, P. S. Lahoti, V. K. Chindhade, M. R. Bhiday, V. N. Bhoraskar, Proc. Department of Atomic Energy, Nuclear Physics and Solid State Physics Symposium, Bombay, 1978, p. 282.
C. M. Lederer, J. M. Hollander, I. Perlman, Table of Isotopes 6th Ed. J. Wiley and Sons, 1967.
A. G. Joglekar, V. K. Chindhade, M. R. Bhiday, V. N. Bhoraskar,Radiochem. Radioanal. Lett., 45 /1980/ 199.
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Jayanthakumar, S.S., Bhoraskar, V.N. Thickness measurement of silicon films using 14 MeV neutrons. Journal of Radioanalytical and Nuclear Chemistry Letters 104, 1–6 (1986). https://doi.org/10.1007/BF02165414
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DOI: https://doi.org/10.1007/BF02165414