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Characterization of Thin Boron and Silicon Carbonitride Films by Wavelength Dispersive Spectroscopy

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Abstract

Results concerning a quantitative determination of elemental composition of films consisting of light elements based on the use of wavelength dispersive spectroscopy (WDS) and energy dispersive spectroscopy are presented. The films were previously studied using IR spectroscopy, ellipsometry, scanning electron microscopy, and energy dispersive spectroscopy, to obtain data on the elemental composition, chemical bonding types, thickness, and surface morphology of the films. Standards for each element have been chosen, and parameters for electron microscopy analysis, such as accelerating voltage and amperage, are experimentally established. Using the WDS technique for studying the composition of boron and silicon carbonitride films is demonstrated to be advantageous.

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Correspondence to V. S. Sulyaeva.

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Original Russian Text © V.S. Sulyaeva, A.G. Plekhanov, E. A Maksimovskii, N.I. Fainer, Yu.M. Rumyantsev, M.L. Kosinova, 2017, published in Fizikokhimiya Poverkhnosti i Zashchita Materialov, 2017, Vol. 53, No. 6, pp. 662–666.

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Sulyaeva, V.S., Plekhanov, A.G., Maksimovskii, E.A. et al. Characterization of Thin Boron and Silicon Carbonitride Films by Wavelength Dispersive Spectroscopy. Prot Met Phys Chem Surf 53, 1187–1191 (2017). https://doi.org/10.1134/S2070205117060211

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  • DOI: https://doi.org/10.1134/S2070205117060211

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