Abstract
A parabolic model of the formg =αn 2 +βn +γ has been suggested for long-wavelength InGaAsP laser diode peak-grain coefficient variations with the carrier density. The parametersα,β andγ, which are dependent on doping, bandgap-wavelength and temperature, have been calculated by applying the least-mean-square method to fit the results of the Lasher and Stern theory of the recombination in semiconductors. p ]This model is superior to the commonly used linear model in accuracy and range of applicability.
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Ghafoori-Shiraz, H. A model for peak-gain coefficient in InGaAsP/InP semiconductor laser diodes. Opt Quant Electron 20, 153–163 (1988). https://doi.org/10.1007/BF02098267
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DOI: https://doi.org/10.1007/BF02098267