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Millimetric response of stressed gallium doped germanium photoconductor

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Conclusion

Conventional Ge:Ga photoconductors presents a residual responsivity at millimetric wavelengths, well below the cut-off wavelength due to the gallium impurity ionization energy. At constant bias voltage, this millimetric responsivity is greatly enhanced when a strong uniaxial stress is applied. We suggest that this response is mainly due to a change in the free hole lifetime when the hole gas is heated by the absorbed microwave photons. This photoconductive process has a shorter response time than the InSb Putley mechanism. Thus optimization of this millimetric Ge:Ga detector could find an application for example for heterodyne detection with larger spectral width than InSb.

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Authors and Affiliations

  1. Laboratoire de Physique des Solides, UPS-INSA, 31077, Toulouse Cédex, France

    C. Mény & J. Léotin

  2. National Physical Laboratory, Teddington, TW11 01W, Middlesex, United Kingdom

    J. R. Birch

Authors
  1. C. Mény
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  2. J. Léotin
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  3. J. R. Birch
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Mény, C., Léotin, J. & Birch, J.R. Millimetric response of stressed gallium doped germanium photoconductor. Int J Infrared Milli Waves 15, 807–817 (1994). https://doi.org/10.1007/BF02096577

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  • DOI: https://doi.org/10.1007/BF02096577

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