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Scattering characteristics of 3-D discontinuity consisting of semiconductor sample filled in waveguide with gaps

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Abstract

The scattering characteristics of 3-D discontinuity consisting of II-VI-epitaxial layer grown on lossy dielectric substrate inserted in the waveguide with gaps are investigated in detail by the method which combines the multimode network theory with the rigorous mode matching procedure. The experimental data verify the accuracy and the effectiveness of the present method.

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References

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Authors and Affiliations

  1. Department of Radio and Electronics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China

    Xu Shanjia, Wu Xinzhang & P. Boege

  2. Physikalisches Institut der Universität Am Hubland, 97074, Würzburg, Germany

    H. Schäfer, C. R. Becker & R. Geick

Authors
  1. Xu Shanjia
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  2. Wu Xinzhang
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  3. P. Boege
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  4. H. Schäfer
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  5. C. R. Becker
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  6. R. Geick
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Shanjia, X., Xinzhang, W., Boege, P. et al. Scattering characteristics of 3-D discontinuity consisting of semiconductor sample filled in waveguide with gaps. Int J Infrared Milli Waves 14, 2155–2190 (1993). https://doi.org/10.1007/BF02096380

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  • DOI: https://doi.org/10.1007/BF02096380

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