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Adsorption and consumption of atomic fluorine on SiO2 surface

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Abstract

In accordance with ellipsometric data, the adsorption of fluorine atoms on SiO2 obtained through the hightemperature oxidation of silicon, proves to be reversible. Chemical interaction of F with SiO2 is shown to be the basic route of F consumption, whereas heterogeneous recombination contributes only slightly under the experimental conditions studied (P=0.1 Torr, T=20–250°C).

Abstract

Методом эллипсометрии исследована адсорбция атомов фтора на поверхности SiO2, полученного высокотемпературным окислением кремния. Установлено, что атомарный фтор на поверхности SiO2 адсорбируется обратимо. Основным каналом его гибели является реакция с SiO2, а гетерогенная рекомбинация в этих условиях (P=0, 1 торр, T=20–250°C) не играет существенной роли.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, 630090, Novosibirsk, USSR

    M. R. Baklanov & F. N. Dultsev

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  1. M. R. Baklanov
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  2. F. N. Dultsev
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Baklanov, M.R., Dultsev, F.N. Adsorption and consumption of atomic fluorine on SiO2 surface. React Kinet Catal Lett 40, 247–251 (1989). https://doi.org/10.1007/BF02073801

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  • DOI: https://doi.org/10.1007/BF02073801

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