The DX center and other tin-related defects in AlGaAs semiconductors

Abstract

Al _x Ga_1-xAs semiconductors doped with both natural and enriched¹¹⁹Sn have been studied by Mössbauer spectroscopy (MS) to help to determine the atomic-scale nature of a deleterious, deep-level defect known as the DX center. Spectra have been acquired in the dark at 76 K and under sub-bandgap illumination at 4 or 10 K to distinguish the DX center from the substitutional shallow donor defect. Although electrical differences are clearly detected in these two states, no difference in the Mössbauer spectra are observed. Unexpected high Sn contents, determined by quantitative MS, demonstrate a large non-electrically active Sn fraction in some samples and this may be obscuring the observation of the DX center by both X-ray absorption spectroscopy and MS. Grinding the single-crystal layers into fine powders leads to an Sn defect that is attributed to a surface-oxidized site.