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Characterization of InxGa1−xAs crystals by 14 MeV neutron activation analysis

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Abstract

Indium doped GaAs crystals are analyzed quantitatively for indium by non-destructive 14 MeV neutron activation analysis. Experimental conditions are optimized to provide a precision of ±5% and a practical sensitivity of 50 ppm, by weight. The accuracy of the neutron activation method is established by comparison with the results obtained by atomic absorption and Rutherford back-scattering techniques. The method has been applied for determining the homogeneity of indium distribution of wafers by sectional analysis and is demonstrated as a reference method for calibrating the low temperature photoluminescence technique.

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References

  1. G. JACOB et al., J. Cryst. Growth, 61 (1983) 417.

    Google Scholar 

  2. D. C. BARRETT et al., J. Cryst. Growth, 70 (1984) 179.

    Google Scholar 

  3. S. YEGNASUBRAMANIAN, V. SWAMINATHAN, R. CARUSO, Measurement of Indium Contents in InxGa1−xAs Semi-insulating Crystals by NAA and Photoluminescence, The Electrochemical Society Meeting, Boston, May 4–9, 1986.

  4. S. S. NARGOLWALLA, E. P. PRZYBYLOWICZ (Eds), Activation Analysis with Neutron Generators, John Wiley & Sons, 1973.

  5. R. GIJBELS, A. SPEECKE, J. HOSTE, Anal. Chim. Acta, 43 (1968) 183.

    Google Scholar 

  6. T. Y. KOMETANI, A. M. WILLIAMS, private communication.

  7. F. BAIOCCHI, private communication.

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Authors and Affiliations

  1. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey, USA

    S. Yegnasubramanian, V. Swaminathan & R. Caruso

Authors
  1. S. Yegnasubramanian
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  2. V. Swaminathan
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  3. R. Caruso
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Yegnasubramanian, S., Swaminathan, V. & Caruso, R. Characterization of InxGa1−xAs crystals by 14 MeV neutron activation analysis. Journal of Radioanalytical and Nuclear Chemistry, Articles 111, 123–128 (1987). https://doi.org/10.1007/BF02060528

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  • DOI: https://doi.org/10.1007/BF02060528

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