Abstract
Occupancy percentages of carbon atoms at trace levels in the Ga1−x Al x As lattice have been determined by irradiating the crystal by a 2.7 MeV deutron beam and exploiting ratios of channeled to random yields for the 〈100〉 and 〈110〉 directions. The influence of the aluminium content on carbon atoms occupancies on centred and displaced tetrahedral as well as octahedral sites occupancies has been measured. Stopping powers of Ga1−x Al x As for the incident particles from the 〈100〉 and 〈110〉 direction irradiations have been determined.
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Misdaq, M.A., Elassali, R., charik, R. et al. A new method for the determination of the interstitial site occupancy of carbon atoms at trace levels in the MO-VPE Ga1−x Al x As lattice. Journal of Radioanalytical and Nuclear Chemistry, Articles 189, 277–282 (1995). https://doi.org/10.1007/BF02042606
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DOI: https://doi.org/10.1007/BF02042606