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Two-photon absorption and emission dynamics of bulk GaAs

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Abstract

Bulk n-type GaAs (dopant silicon) is investigated with picosecond pump pulses of a passively mode-locked Nd:glass laser. The two-photon absorption, the spontaneous emission, and the longitudinal amplified spontaneous emission are measured. The experimental results are compared with computer simulations and relevant material parameters are determined.

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Authors and Affiliations

  1. Naturwissenschaftliche Fakultät II — Physik, Universität Regensburg, D-8400, Regensburg, Germany

    A. Penzkofer & A. A. Bugayev

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  1. A. Penzkofer
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  2. A. A. Bugayev
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On leave from: A. F. Ioffe Physico-Technical Institute, Leningrad, USSR.

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Penzkofer, A., Bugayev, A.A. Two-photon absorption and emission dynamics of bulk GaAs. Opt Quant Electron 21, 283–306 (1989). https://doi.org/10.1007/BF02027300

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  • DOI: https://doi.org/10.1007/BF02027300

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