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Thermal resistance of InGaAs/InP laser diodes

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Abstract

Results of theoretical and experimental investigations of the thermal behaviour of InGa-AsP/InP laser diodes with a ridge-waveguide structure are presented. It is shown that, in contrast to GaAlAs/GaAs laser diodes, most of the heat flux is carried through the InP-substrate, less than 1/4 through the ridge. The temperature rise in the active region was determined and the thermal resistance calculated for various structure and bond parameters. The theoretical and experimental results fit very well. The change of the thermal resistance compared to a norm value of 67 K/W with variation of structure parameters is discussed. It is strongly affected by the device length, the ridge width and the bonding parameters.

Zusammenfassung

Die Ergebnisse einer theoretischen und experimentellen Untersuchung des thermischen Verhaltens von InGaAsP/InP Laserdioden mit Stegwellebleiterstruktur wurden dargelegt. Es wurde gezeigt, da\ der grö\te Teil des WÄrmeflusses durch das InP-Substrat geleitet wird, nur weniger als 1/4 durch den Steg. Man bestimmte den Temperaturanstieg in der aktiven Zone und berechnete für verschiedene Struktur- und Montageparameter die thermische Widerstand. Theoretische und experimentelle Ergebnisse stimmen gut miteinander überein. Die Änderung der thermischen BestÄndigkeit verglichen mit einem Normwert von 67 K/W wird in AbhÄngigkeit der Strukturparameter untersucht. Sie wird durch chiplÄnge Stegbreite und Bindungsparameter stark beeinflu\t.

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Authors and Affiliations

  1. Central Institute of Optics and Spectroscopy Rudower Chaussee 6, Berlin VEB Werk für Fernsehelektronik, Ostendstr. 1 - 14, Berlin, Germany

    W. Both & J. Piprek

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  1. W. Both
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  2. J. Piprek
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Both, W., Piprek, J. Thermal resistance of InGaAs/InP laser diodes. Journal of Thermal Analysis 36, 1441–1456 (1990). https://doi.org/10.1007/BF01914067

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  • DOI: https://doi.org/10.1007/BF01914067

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