Abstract
In this paper we propose to use a combination of a modified isothermal Deep Level Transient Spectroscopy (IDLTS) method with optical excitation and a filtering method of multi-exponential decays for IDLTS signal represented by a nonexponential transient capacitance. Excellent agreement with published results is achieved using this method for the investigation of a hole trap response (HL4) interfering with other traps in Schottky barriers that were fabricated on an epitaxial GaAs layer grown by VPE on bulk N-GaAs.
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The authors express sincere thanks to I. Thurzo and F. Dubecký of the Slovak Academy of Sciences who provided samples for these experiments and for useful advice.
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Stuchlíková, L., Gaži, M. Improvement in the determination of accuracy of enthalpy of ionization from the isothermal deep level transient spectroscopy. Czech J Phys 44, 745–752 (1994). https://doi.org/10.1007/BF01700641
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DOI: https://doi.org/10.1007/BF01700641