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Space-charge capacitance in thin semiconductor monocrystalline films

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Czechoslovak Journal of Physics B Aims and scope

Abstract

The paper describes the solution for the space-charge capacitance in thin semiconductor films under general boundary conditions. The influence of both surfaces and film thickness on this capacitance is discussed in more detail and it is shown that cases exist in which the space-charge capacitance depends on the properties of one surface or on the film thickness only.

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Abbreviations

E s2 :

dimensionless surface field intensity

F 1, F2, F3 :

space-charge functions

k :

Boltzmann's constant

n :

bulk electron density

p b :

bulk hole density

q :

electron charge

T :

absolute temperature

ε o :

permittivity of free space

ε s :

relative permittivity of semiconductor

δ :

dimensionless thicknessd/L D

ζ :

dimensionless coordinate perpendicular to the surfacez/L D

ψ :

dimensionless potential (multiples ofkT/q).

References

  1. Many A. et al.: Semiconductor Surfaces, Pergamon Press, 1965.

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  4. Heiman F. P., Warfield G.: J. Appl. Phys.36 (1965), 3206.

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  5. Jerhot J., Šnejdar V.: Czech. J. Phys.B 20 (1970), 903.

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  6. Jerhot J., Šnejdar V.: Research Report URE-240/68.

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Czechosl. Acad. Sci., Lumumbova 1, Praha 8, Czechoslovakia

    J. Jerhot & V. Šnejdar

Authors
  1. J. Jerhot
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  2. V. Šnejdar
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Jerhot, J., Šnejdar, V. Space-charge capacitance in thin semiconductor monocrystalline films. Czech J Phys 21, 1114–1117 (1971). https://doi.org/10.1007/BF01690924

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  • DOI: https://doi.org/10.1007/BF01690924

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