Abstract
The Voltampere characteristics of silicon p-n junctions, prepared by pulling from a crucible and the floating zone method, were used to study some of the properties of silicon.
Similar content being viewed by others
References
Shockley W.: Bell Syst. Tech. J.28 (1949), 435.
Shockley W., Read W. T.: Phys. Rev.87 (1952), 835.
Kleinknecht H., Seiler K.: Zeit. Physik139 (1954), 599.
Pell E. M.: J. Appl. Phys.26 (1955), 658.
Bernard M.: J. Electronics2 (1957), 579.
Sah C. T., Noyce R. N., Shockley W.: Proc. IRE45 (1957), 1228.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Tomek, K. Surface changes in silicon during heating in air to 450°c. Czech J Phys 15, 135–137 (1965). https://doi.org/10.1007/BF01688511
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF01688511