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Microwave plasmas in surface treatment technologies

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Czechoslovak Journal of Physics Aims and scope

Abstract

In this review, basic problems of generating microwave isotropic and anisotropic plasmas are summarized. A brief description of the fundamental types of microwave-plasma-based devices which are used in various surface treatment technologies are given. Their application potentialities and probable directions of future development are discussed.

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References

  1. Shibaki M., Horiike Y., Yamazaki T., Kashiwagi M.:in Proc. Electrochem. Soc. Fall Meeting, Atlanta 1977. Abstract 152, p. 416.

  2. Bárdoš L., Musil J.: Czech. J. Phys. B35 (1985) 1437.

    Google Scholar 

  3. Tsu D. V., Lucovsky G.: J. Vac. Sci. Technol. A4 (1986) 480.

    Google Scholar 

  4. Hayasaha N., Okano H., Horiike Y.: Solid State Technol.31 (1988) 127.

    Google Scholar 

  5. Bersin R. L.: Microelec. Manufac. Testing9 (1986) 18.

    Google Scholar 

  6. Dušek V.:in Proc. 2 Fachtagung “Schichtsysteme für zukünftige Bauelemente der Mikro-, Opto-, Bioelektronik und Optik”, Karl-Marx-Stadt 1989 (Ed. W. Scharff), p. 20.

  7. Dzioba S., Este G., Naguib H. M.: J. Electrochem. Soc., Solid-State Sci. Technol.129 (1982) 2537.

    Google Scholar 

  8. Lončar G., Musil J., Bárdoš L.: Czech. J. Phys. B30 (1980) 688.

    Google Scholar 

  9. Bárdoš L., Dragila R., Lončar G., Musil J.: Creation of Thin Oxide Films in a Microwave Oxygen Plasma (Rozpravy čSAV 93). Academia, Praha, 1983.

    Google Scholar 

  10. Hirose M., Akai Y.: US Patent 4 265 730 (1981).

  11. Harper J. M. E.: Solid State Technol.30 (1987) 129.

    Google Scholar 

  12. Rigsbee J. M., Scott P. A., Knipe R. K., Ju C. P., Hock V. F.:in Proc. 5th. Conf. Ion Plasma Assist. Tech. IPAT '95, Munich 1985. CEP Consultants Ltd., Edinburgh, 1985, p.206.

    Google Scholar 

  13. Suzuki K., Sawabe A., Yasuda H., Inuzuka T.: Appl. Phys. Lett,50 (1987) 728.

    Google Scholar 

  14. Coburn J. W.: Superlattices Microstruct.2 (1986) 17.

    Google Scholar 

  15. Fukushima M., Haginoya M., Nakashima S., Hashimoto I.:in Abstracts of 6th Int. Conf. Ion Beam Modification of Materials. Tokyo 1988, Abstract DP-5.

  16. Abstracts of 7th Int. Conf. Ion Implantation Technology, Kyoto 1988 (Ed. T. Takagi).

  17. Matsuo S., Adachi Y.: Jpn. J. Appl. Phys.21 (1982) L4.

    Google Scholar 

  18. Matsuo S., Kiuchi M.: Jpn. J. Appl. Phys.22 (1983) L210.

    Google Scholar 

  19. Suzuki K., Ninomiya K., Tsujimoto K., Okudaira S., Nishimatsu S.:in Proc. 8th ISPC. Tokyo 1987 (Ed. K. A. Akashi, A. Kinbara), p. 2399.

  20. Pomot C., Mahi B., Petit B., Arnal Y., Pelletier J.: J. Vac. Sci. Technol. B4 (1986) 1.

    Google Scholar 

  21. Kawarada H., Mar K. S., Hiraki A.: Jpn. J. Appl. Phys.26 (1987) L1032.

    Google Scholar 

  22. Tsuji H., Hagoki H., Ishikawa J., Takagi T.:in Proc. 11th Symp. Ion Sources Ion-Assisted Technol. ISIAT'87, Tokyo 1987 (Ed. T. Takagi), p. 23.

  23. Tokiguchi K., Amemiya K., Koike H., Sakudo N., Seki T.:in Proc. 6th Int. Conf. Ion Plasma Assist. Tech. IPAT'87, Brighton 1987. CEP Consultants Ltd., Edinburgh, 1987, p.45.

    Google Scholar 

  24. Kobayashi K., Hayama M., Kawamoto S., Miki H.: Jpn. J. Appl. Phys.26 (1987) 202.

    Google Scholar 

  25. Hayama M., Kobayashi K., Kawamoto S., Miki H., Onishi Y.: J. Non-Cryst. Solids97/98 (1987) 273.

    Google Scholar 

  26. Musil J.: Vacuum36 (1986) 161.

    Google Scholar 

  27. Musil J., Žáček F.: Experimental Study of the Absorption of Intense Electromagnetic Waves in a Magnetoactive Plasma (Rozpravy čSAV 85). Academia, Praha, 1975.

    Google Scholar 

  28. Moisan M., Chaker M., Zakrzewski Z., Paraszczak J.: J. Phys. E, Sci. Instrum.20 (1987) 1356.

    Google Scholar 

  29. Limpaecher R., MacKenzie K. R.: Rev. Sci. Instrum.44 (1973) 726.

    Google Scholar 

  30. Mantei T. D., Wicker T.: Appl. Phys. Lett43 (1983) 84.

    Google Scholar 

  31. Raeder P. D., Kaufman H. R.: J. Vac. Sci. Technol.12 (1975) 1344.

    Google Scholar 

  32. Pomathoid L., Debrie R., Arnal Y., Pelletier J.: Phys. Lett. A106 (1984) 301.

    Google Scholar 

  33. Arnal Y., Pelletier J., Pomot C., Petit B., Durandet A.: Appl. Phys. Lett.45 (1984) 132.

    Google Scholar 

  34. Pichot M. G.: Microelectron. Eng.31 (1985) 411.

    Google Scholar 

  35. Arnal Y., Durandet A., Pelletier J., Pichot M., Vallier L.:in 6e Coll. Int. Plas. Pulver. Cath. +4e Symp. Int. Grav. Depot. Plas. Microel. CIPG'87. Antibes 1987, p. 73.

  36. Moisan M., Zakrzewski Z., Pantel R., Leprince P.: IEEE Trans. Plasma Sci. PS-12 (1984) 203.

    Google Scholar 

  37. Moisan M., Zakrzewski Z., Pantel R.: J. Phys. D, Appl. Phys.12 (1979) 219.

    Google Scholar 

  38. Kobashi K., Nishimura K., Kawate Y., Horiuchi T.:in Proc. 8th Int. Symp. Plasma Chem. ISPC'87, Tokyo 1987 (Ed. K. Akashi, A. Kinbara), p. 2475.

  39. Kamo M., Chawanaya H., Tanaka T., Sato Y., Setaka N.:in Proc. 8th Int. Symp. Plasma Chem. ISPC'87, Tokyo 1987 (Ed. K. Akashi, A. Kinbara), p. 2481.

  40. Sato Y., Kamo M., Setaka N.:in Proc. 8th Int. Symp. Plasma Chem. ISPC'87, Tokyo 1987 (Ed. K. Akashi, A. Kinbara), p. 2446.

  41. Kamo M., Sato Y., Matsumoto S., Setaka N.: J. Cryst. Growth62 (1983) 642.

    Google Scholar 

  42. Badzian A. R., Badzian T., Roy R., Messier R., Spear K. E.: Mat. Res. Bull.23 (1988) 531.

    Google Scholar 

  43. Suzuki K., Okudaira S., Sakudo N., Kanomata I.: Jpn. J. Appl. Phys.16 (1977) 1979.

    Google Scholar 

  44. Musil J., Bárdoš L.: Czechoslovak patent No. 208 419 (1979).

  45. Ono T., Takahashi Ch., Matsuo S.: Jpn. J. Appl. Phys.23 (1984) L534.

    Google Scholar 

  46. Anelva Corp.: ECR-300, 310 Plasma CVD System.

  47. Chen Keqiang, Zhang Erli, Wu Jinfa, Zhen Hausheng, Guan Zuoyao, Zhou Bangwei: J. Vac. Sci. Technol. A4 (1986) 828.

    Google Scholar 

  48. Chayahara A., Yokoyma H., Imura T., Osaka Y., Fujisawa M.:in Proc. 8th Int. Symp. Plasma Chem. ISPC'87, Tokyo 1987 (Ed. K. Akashi, A. Kinbara), p. 2440.

  49. Hiraki A.:in Abstracts 7th Int. Conf. Ion Implantation Technology ITT '88, Kyoto 1988 (Ed. T. Takagi), p. 205.

  50. Watanabe T., Azuma K., Nakatami: Jpn. J. Appl. Phys.25 (1986) 1805.

    Google Scholar 

  51. Matsuo S.:in Extended Abstracts 16th Int. Conf. Solid State Devices Mat., Kobe 1984, p. 459.

  52. Suzuki K., Ninomiya K., Nishimatsa S., Okudaira S.: J. Vac. Sci. Technol. B3 (1985) 1025.

    Google Scholar 

  53. Nishioka K., Fujiwara N., Morita H., Yoneda M., Morimoto H., Mashiko Y., Kato T.:in Proc. 8th Int. Conf. Plasma Chem. ISPC'87, Tokyo 1987 (Ed. K. Akashi, A. Kinbara), p. 2411.

  54. Minomo S., Taniguchi M., Ishida Y., Sugiyo M., Takahshi T., Tonouchi M., Kita S., Kobayashi T.: Jpn. J. Appl. Phys.27 (1988) L411.

    Google Scholar 

  55. Maeda T., Nakae H., Hirai T.:in Proc. 8th Int. Symp. Plasma Chem. ISPC'87, Tokyo 1987 (Ed. K. Akashi, A. Kinbara), p. 2434.

  56. Manabe Y., Mitsuyu T., Yamazaki O.:in Proc. 8th Int. Symp. Plasma Chem. ISPC'87, Tokyo 1987 (Ed. K. Akashi, A. Kinbara), p. 2428.

  57. Watanabe T., Tanaka M., Azuma K., Nakatami M., Sonobe T., Shimada T.: Jpn. J. Appl. Phys.26 (1987) L288.

    Google Scholar 

  58. Watanabe T., Tanaka M., Azuma K., Nakatami M., Sonobe T., Shimada T.: Jpn. J. Appl. Phys.26 (1987) 1215.

    Google Scholar 

  59. Hattori Y., Kruangam D., Toyama T., Okamoto H., Hamakawa Y.: J. Non-Cryst. Solids97/98 (1987) 1079.

    Google Scholar 

  60. Kato S., Oyama H., Sakamoto Y.:in Proc. 8th Int. Symp. Plasma Chem. ISPC'87, Tokyo 1987 (Ed. K. Akashi, A. Kinbara), p. 2422.

  61. Kawarada H., Mar K. S., Suzuki J., Ito T., Mori H., Fujita H., Hiraki A.: Jpn. J. Appl. Phys.26 (1987) L1903.

    Google Scholar 

  62. Kawarada H., Nishimura K., Ito T., Suzuki J., Mar K. S., Yokota Y., Hiraki A.: Jpn. J. Appl. Phys.27 (1988) L683.

    Google Scholar 

  63. Burke R. R., Pomot C.: Solid State Technol.31 (1988) 67.

    Google Scholar 

  64. Mahi B., Arnal A., Pomot C.: J. Vac. Sci. Technol. B5 (1987) 657.

    Google Scholar 

  65. Burke R. R., Guillermet M., Vallier L., Voisin E.:in Proc. Mat. Res. Soc., Symp. A “Photon, beam and plasma enhanced processing”, Strassbourg 1987 (Ed. A. Golanski, V. T. Nguyen, E. F. Krimmel), poster AII/III. 30.

  66. Tamagawa H., Okamoto Y., Akutagawa Ch.: Jpn. J. Appl. Phys.11 (1972) 1226.

    Google Scholar 

  67. Anelva Corp.: ECR-300, 310 Reactive Ion Shower System.

  68. Sakudo N., Tokiguchi K., Koike H., Kanomata I.: Rev. Sci. Instrum.48 (1977) 762.

    Google Scholar 

  69. Sakudo N., Tokiguchi K., Koike H., Kanomata I.: Rev. Sci. Instrum.49 (1978) 940.

    Google Scholar 

  70. Lyneis C. M.: Nucl. Instrum. Methods Phys. Res. B10/11 (1985) 775.

    Google Scholar 

  71. Ishikawa J., Takeiri Y., Takagi T.: Rev. Sci. Instrum.55 (1984) 449.

    Google Scholar 

  72. Ishikawa J., Takaoka H., Fujime K., Takagi T.:in Proc. 6th Int. Conf. Ion Plasma Assist. Tech. IPAT'87, Brighton 1987. CEP Consultants Ltd., Edinburgh 1987, p.33.

    Google Scholar 

  73. Tokiguchi K., Itoh H., Sakudo N., Koike H., Saitoh T.:in Proc. 5th Int. Conf. Ion Plasma Assist Tech. IPAT'85, Munich 1985. CEP Consultants Ltd., Edinburgh, 1985, p.7.

    Google Scholar 

  74. Bárdoš L., Musil J., Taras P.: Thin Solid Films102 (1983) 107.

    Google Scholar 

  75. Claude R., Moisan M., Wertheimer M. R., Zakrzewski Z.: Plasma Chem. Plasma Process.7 (1987) 451.

    Google Scholar 

  76. Hultman L., Helmersson U., Barnett S. A., Sundgren J.-E., Greene J. E.: J. Vac. Sci. Technol. A4 (1987) 2162.

    Google Scholar 

  77. Greene J. E.: Solid State Technol.30 (1987) 115.

    Google Scholar 

  78. Müller K.-H.: J. Vac. Sci. Technol. A5 (1987) 2161.

    Google Scholar 

  79. Electrotech: MPM 390 Multipolar ECR Etcher.

  80. Bárdoš L., Musil J., Taras P.: Res. Rept. on Contract no. 11/79 for Inst. Nucl. Research, ŘeŽ, Inst. Plasma Phys., Czech. Acad. Sci., Prague 1982 (in Czech).

    Google Scholar 

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  1. Institute of Physics, Czechosl. Acad. Sci., Na Slovance 2, 180 40, Prague 8, Czechoslovakia

    V. Dušek & J. Musil

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  1. V. Dušek
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Dušek, V., Musil, J. Microwave plasmas in surface treatment technologies. Czech J Phys 40, 1185–1204 (1990). https://doi.org/10.1007/BF01605048

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  • DOI: https://doi.org/10.1007/BF01605048

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