Abstract
An attempt is made to study the dependence of the diffusivity-mobility ratio on carrier concentration in degenerate n-Cd3As2 according to the Bodnar model which has recently been shown in the literature from studies on magnetic quantization to be the most valid model for Cd3As2. The results obtained are then compared with those derived on the basis of the Kane model to indicate the amount of error that would be involved with the use of the same model since many authors have continued to use it for Cd3As2.
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References
Landsberg P. T.: Proc. R. Soc.213A (1952) 226.
Lindholm F. A., Ayers R. W.: Proc. IEEE56 (1968) 371.
Nag B. R.: Electron Transport in Compound Semiconductors, Springer Series in Solid State Sciences 11, Springer-Verlag, Heidelberg, 1980.
Rosenman I.: J. Phys. & Chem. Solids30 (1969) 1385.
Aubin M. J., Caron L. G., Jay-Gérin J. P.: Phys. Rev. B15 (1977) 3872; Phys. Rev. B15 (1977) 3879.
Jay-Gérin J. P., Aubin M. J., Caron L. G.: Phys. Rev. B18 (1978) 4542.
Blom F. A. P., Gelten M. J.: Phys. Rev. B19 (1979) 2411.
Kane E. O.: J. Phys. & Chem. Solids1 (1957) 249.
Bodnar J.: In Proc. Int. Conf. of the Physics of Narrow-gap Semiconductors, Warsaw 1977, Polish Sc. Publishers, Warsaw, 1978.
Kildal H.: Phys. Rev. B10 (1974) 5082.
Blom F. A. P., Cremers J. W., Neve J. J., Gelten M. J.: Solid State Commun.33 (1980) 69.
Wallace P. R.: Phys. Status Solidi (b)92 (1979) 49.
Spenke E.: Electronic Semiconductors, McGraw-Hill, N. Y., 1958.
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Chakravarti, A.N., Ghatak, K.P., Ghosh, K.K. et al. Effect of carrier degeneracy on the diffusivity-mobility ratio in n-Cd3As2 . Czech J Phys 31, 1138–1143 (1981). https://doi.org/10.1007/BF01604778
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DOI: https://doi.org/10.1007/BF01604778