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Coulomb effects and thermopower in elemental covalent amorphous semiconductors

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Czechoslovak Journal of Physics B Aims and scope

Abstract

It is shown that the Coulomb effects resulting in a single-occupancy of localized states in the vicinity of the chemical potential in the mobility gap yield a simple possibility to explain both the magnitude and the temperature insensitiveness of the thermoelectric power of amorphous Ge and Si in the phonon-assisted hopping regime observed at low temperatures.

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Authors and Affiliations

  1. Institute of Physics of the Charles University, Prague, Ke Karlovu 5, 121 16, Praha 2, Czechoslovakia

    V. čápek

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  1. V. čápek
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Additional information

The main physical ideas of this work resulted from a collaboration with Drs. A.Aldea and L.Bányai (see ref. [28]). The present author acknowledges with pleasure their significant contribution to this work.

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čápek, V. Coulomb effects and thermopower in elemental covalent amorphous semiconductors. Czech J Phys 28, 894–903 (1978). https://doi.org/10.1007/BF01600097

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  • DOI: https://doi.org/10.1007/BF01600097

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