On the possibility of measuring the thickness of very thin films using electron probe microanalyzer

Abstract

The measurement of the thickness of thin aluminum and silver films using an electron probe microanalyzer is described. The method of measurement was studied in order to investigate very thin discontinuous aluminum layers, originated from inorganic residues of photoresists removed from the surface of silicon and other materials by plasma oxidation. The calibration curves, i.e. the dependences of the intensity of the characteristic X-ray emission on the thickness of thin standard films evaporated on the same substrate, were determined for the evaluation of the measurements. These dependences were measured till the smallest thickness ≈15 nm of the standard film. Then the curves were extrapolated to the origin of coordinates and the film thickness was calculated using the value of the slope of tangent to the calibration curve in the origin. In order to estimate the accuracy of this procedure, the calibration curves were expressed analytically using the mathematical representation of the electron excitation function. It follows from the results that the shape of the calibration curves may be influenced mainly due to electrons scattered from the substrate back into the film and due to fluorescence excitation of X-ray emission. The last effect was markedly observed in Al/Si system.