Abstract
Reflection medium energy electron diffraction, scanning electron microscope and measurements of angular dependence of reflectivity in vacuum ultraviolet region, low-temperature photoluminescence and Hall effect were used to study surface structure and morphology and optical and electrical properties of GaAs layers grown by molecular beam epitaxy (MBE) and influence of growth conditions on their properties. The quality of MBE GaAs layers depends strongly on the growth conditions. The residual background impurities in MBE system and other contamination sources degrade the optical and electrical quality and can influence the formation of macroscopic defects. The incorporation of background impurities and the formation of vacancy-impurity complexes are dramatically affected by As4 to Ga flux ratio at a given growth temperature and suppressed strongly under growth conditions with slight As excess which ensures to maintain the As-stabilised surface. The growth under such conditions results in improved electrical and optical properties and satisfactory surface morphology.
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The authors are indebted to Dr. J. Oswald for the measurements of PL spectra, to Drs. M. Šimecková and K. Jurek for their kind assistance in SEM investigation and for taking SEI and X-ray microprobe analyses, to Ing. O. Štika for the measurements of thickness of the layers and to Dr. P. Doubrava for the Hall effect measurements in several samples. For the use of facilities to measure the Hall effect the thanks are also due to Dr. V. Šmíd.
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Dung, P.T., Láznička, M. & Pajasová, L. Relationship of properties of MBE grown GaAs layers with growth conditions. Czech J Phys 36, 759–768 (1986). https://doi.org/10.1007/BF01597415
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DOI: https://doi.org/10.1007/BF01597415