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Spectral distribution of photoconductivity and lifetime in CdTe at the presence of surface trapping processes

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Czechoslovak Journal of Physics B Aims and scope

Abstract

The spectral distribution of steady-state photoconductivity has been studied in p-type CdTe single crystals in the wavelength range 0·6–1 μ. The kinetics of photoconductivity has been measured by the frequency dependence and relaxation of photoconductivity. The relaxation of photoconductivity signals is controlled by two processes of carrier trapping indicating the presence of two energetic levels in the gap. The spectral dependence of effective photoconductivity relaxation time (τeff) passes through a minimum value. The position of τeff min coincides with the position of the photoconductivity maximum at λ = 0·85 μ. An explanation of the experimental data is given on the basis of the localized photoconductivity in the surface space charge region as well as in the bulk photoconductivity.

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The experimental part of this work has been done at theSolid State Physics Laboratory of the National Research Centre, Cairo, Egypt.

The authors are deeply indebted to Dr. V. G.Litovčenko for helpful and interesting discussions on the subject of this paper and to M. S.Ibrahim for his help in carrying out the experiments. Useful discussions with Drs. S.Koc and R.Kužel are also gratefully acknowledged.

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Talat, G.H., Tomášek, M. Spectral distribution of photoconductivity and lifetime in CdTe at the presence of surface trapping processes. Czech J Phys 28, 331–337 (1978). https://doi.org/10.1007/BF01597221

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  • DOI: https://doi.org/10.1007/BF01597221

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