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On Recombination Processes in CdS–PbS Films

  • Surfaces, Interfaces, and Thin Films
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Abstract

The transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS)0.9–(PbS)0.1 films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is shown. The films are excited over the entire active surface and pointwise (within one crystallite). The surface recombination rate and the lifetime of majority charge carriers at different generation rates and characters of excitation are estimated. A comparative table of recombination parameters of CdS and CdS–PbS films is presented.

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Authors and Affiliations

  1. Saratov State University, Saratov, 410012, Russia

    A. G. Rokakh, M. I. Shishkin & V. S. Atkin

Authors
  1. A. G. Rokakh
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  2. M. I. Shishkin
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  3. V. S. Atkin
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Correspondence to M. I. Shishkin.

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Original Russian Text © A.G. Rokakh, M.I. Shishkin, V.S. Atkin, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 8, pp. 853–859.

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Rokakh, A.G., Shishkin, M.I. & Atkin, V.S. On Recombination Processes in CdS–PbS Films. Semiconductors 52, 986–992 (2018). https://doi.org/10.1134/S1063782618080171

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  • DOI: https://doi.org/10.1134/S1063782618080171

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