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Two types of magnetoresistance in amorphous germanium

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Czechoslovak Journal of Physics B Aims and scope

Abstract

The magnetoresistance ot sputtered films of a-germanium has been measured in the temperature region 78–450 K in magnetic fields up to 25 kG. Two types of dependences of the magnetoresistance on the magnetic field and the temperature have been found. Differences between these two types are ascribed to the influence of deep impurity levels on the electrical conductivity in amorphous Ge.

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Authors and Affiliations

  1. Institute of Solid State Physics, Czechosl. Acad. Sci., Prague, Cukrovarnická 10, Praha 6, Czechoslovakia

    I. Kubelík & A. Tříska

Authors
  1. I. Kubelík
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  2. A. Tříska
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Additional information

We are grateful to Mr. J.Zemek for preparation of the germanium samples.

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Kubelík, I., Tříska, A. Two types of magnetoresistance in amorphous germanium. Czech J Phys 23, 123–129 (1973). https://doi.org/10.1007/BF01596886

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  • DOI: https://doi.org/10.1007/BF01596886

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