The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Е t located 0.95 eV below the conduction band bottom.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
V. M. Kalygina, Yu. S. Petrova, I. A. Prudaev, and O. P. Tolbanov, Russ. Phys. J., 59, No. 6, 757–761 (2016).
V. M. Kalygina, A. N. Zarubin, E. P. Naiden, at. al., Fiz. Tekh. Poluprovodn., 45, No. 8, 1130 (2011).
Z. Galazka, K. Imscher, R. Uecker, et al., J. Cryst. Growth, 404, 184 (2014).
B. Zheng, Y. Hua, Y. Yue, and Z. Gao, J. Catal., 232, 143 (2005).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 56–60, November, 2017.
Rights and permissions
About this article
Cite this article
Lygdenova, T.Z., Kalygina, V.M., Novikov, V.A. et al. Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering. Russ Phys J 60, 1911–1916 (2018). https://doi.org/10.1007/s11182-018-1302-0
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11182-018-1302-0