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Resistivity changes of evaporated Ti films caused by sorption of O2, CO2 and H2

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Czechoslovak Journal of Physics B Aims and scope

Abstract

Resistivity changes of Ti films evaporated in UHV were measured during sorption of O2, CO2 and H2 at very low pressures (p ∼ 1·6×10−6−1·6×10−5Pa). During the sorption process the pressure was kept constant. For O2 and CO2 an increase of the resistivity with a tendency to saturation was observed. For H2 anomalous curves with a resistivity maximum and a subsequent decrease of the resistivity were obtained. Possible mechanisms of the processes are discussed. For the Ti/O2 interaction a simple model describing the time dependence of the resistivity changes is proposed.

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Authors and Affiliations

  1. Faculty of Mathematics and Physics, Charles University, Prague, Povltavská 1, 180 00, Praha 8, Czechoslovakia

    P. Šebelík & L. Eckertová

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  1. P. Šebelík
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  2. L. Eckertová
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We are indebted to dr. L. Pátý for consultations in vacuum technology and his permanent help in the experimental work and to dr. Z. Knor for a valuable discussion and for kindly extending us many references.

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Šebelík, P., Eckertová, L. Resistivity changes of evaporated Ti films caused by sorption of O2, CO2 and H2 . Czech J Phys 31, 732–743 (1981). https://doi.org/10.1007/BF01596328

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  • DOI: https://doi.org/10.1007/BF01596328

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