Abstract
For the problem of electron scattering on charged unscreened impurities, the scattering rate is calculated self-consistently. The resulting low-temperature mobility is only, slightly temperature dependent and differs from an analogous result of Fujita et al. (J. Phys. Chem. Sol.37 (1976), 227) and Zubarev et al. (Sol. State Commun.21 (1977), 565) by just a change of a numerical constant.
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Čápek, V. Low-temperature mobility due to unscreened charged impurities in compensated semiconductors. Czech J Phys 30, 684–687 (1980). https://doi.org/10.1007/BF01595640
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DOI: https://doi.org/10.1007/BF01595640