Parametric excitation of electron density fluctuations in narrow-gap semiconductors

Conclusions

In the present paper we have solved the problem of parametric instability in narrowgap semiconductors, taking into account the electron interband transition. We have found the growth rate of longitudinal electromagnetic vibrations for the case on n-type degenerate semiconductors and for the quantityx = ω ₀/Δ(k₀) < 1. The interband transition effect lowers the rate of growth, i.e. it makes the system more stable in the sense of excitation of eigenmodes. For the InSb sample the threshold field value increases by about one order of magnitude. The effect would be stronger in semiconductors with narrower gaps.