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Technology of the (Al,Ga)As/GaAs double heterostructure lasers

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Czechoslovak Journal of Physics B Aims and scope

Conclusion

Even thqugh the LPE growth of (Al,Ga)As layers is now largely a matter of industrial development or routine, there still remain some problems that need fundamental study. We have pointed to two of them: growth of very thin layers and the influence of ambient atmosphere. The problem of automation of the growth process, while being connected with industrial LPE installations, also has a bearing on the fundamental research, e.g. it is important for reproducible preparation of very thin layers.

We did not include in this paper work done in our laboratories in the field of integrated optics. A hybrid combination of DH coherent source with a MESFET GaAs device has been tested; integrated version of this optoelectronic circuit is in preparation.

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics, Czechosl. Acad. Sci., Lumumbova 1, 182 51, Praha 8, Czechoslovakia

    J. Novotný

  2. TESLA Electronics Research Institute, Novodvorskd 994, 142 21, Praha 4, Czechoslovakia

    I. Hüttel

  3. Institute of Radio Engineering and Electronics, Czechosl. Acad. Sci., Lumumbova 1, 182 51, Praha 8, Czechoslovakia

    F. Šrobár

Authors
  1. J. Novotný
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  2. I. Hüttel
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  3. F. Šrobár
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Additional information

Invited talk at the International Conference on Radiative Recombination and Related Phenomena in III–V Compound Semiconductors, Prague, 4–7 October, 1983.

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Novotný, J., Hüttel, I. & Šrobár, F. Technology of the (Al,Ga)As/GaAs double heterostructure lasers. Czech J Phys 34, 485–492 (1984). https://doi.org/10.1007/BF01590092

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  • DOI: https://doi.org/10.1007/BF01590092

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