Abstract
The influence of annealing (up to 900 °C) on the absorption edge and the temperature dependence of the electrical conductivity of amorphous silicon (a-Si) thin layers prepared by cathode sputtering is reported. Up to 400 °C the changes by annealing on the above mentioned properties are explained by the decrease of the density of states within the mobility gap. At higher temperatures, two processes start to play role: the crystalization of the layer and the probable contamination, especially by oxygen.
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We thank Dr. M.Rozsíval for testing our samples by the electron diffraction.
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Koc, S., Závětová, M. & Zemek, J. Physical properties of amorphous Si: The role of annealing. Czech J Phys 25, 83–90 (1975). https://doi.org/10.1007/BF01589675
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DOI: https://doi.org/10.1007/BF01589675