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Phononless hopping in the mobility gap of amorphous semiconductors

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Czechoslovak Journal of Physics B Aims and scope

Abstract

Two different theories are analyzed and shown to yield the same result for the phononless contribution to the dc hopping conductivity due to electrons in localized states (with single-electron energies broadened by the electron-phonon interaction) in the mobility gap of amorphous semiconductors. Numerical estimate is then used to show that this mechanism cannot explain experimental data on elemental covalent amorphous semiconductors.

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Authors and Affiliations

  1. Institute of Physics of the Charles University, Prague, Ke Karlovu 5, 121 16, Praha 2, Czechoslovakia

    V. Čápek

  2. Department of Mathematical Physics, Faculty of Mathematics and Physics, Prague, Ke Karlovu 3, 121 16, Praha 2, Czechoslovakia

    V. Szöcs

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  1. V. Čápek
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  2. V. Szöcs
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Čápek, V., Szöcs, V. Phononless hopping in the mobility gap of amorphous semiconductors. Czech J Phys 27, 682–685 (1977). https://doi.org/10.1007/BF01587522

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  • DOI: https://doi.org/10.1007/BF01587522

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