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A model of oxide film originating at thermal oxidation of GaAs

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Czechoslovak Journal of Physics B Aims and scope

Abstract

In this paper an approximative procedure to determine of the most probable model of oxide film originating at thermal oxidation of GaAs single-crystal samples within the temperature range 480–530 °C is proposed. It is shown that the system presented is more complicated if compare with that presumed previously.

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Authors and Affiliations

  1. Department of Solid State Physics, Faculty of Science, Purkyně University, Brno, Kotlářská 2, 611 37, Brno, Czechoslovakia

    K. Navrátil, I. Ohlídal & F. Lukeš

Authors
  1. K. Navrátil
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  2. I. Ohlídal
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  3. F. Lukeš
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Navrátil, K., Ohlídal, I. & Lukeš, F. A model of oxide film originating at thermal oxidation of GaAs. Czech J Phys 27, 672–681 (1977). https://doi.org/10.1007/BF01587521

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  • DOI: https://doi.org/10.1007/BF01587521

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